基本信息:
- 专利标题： LATERAL GALLIUM NITRIDE SUPERJUNCTION
- 申请号：EP22205205.2 申请日：2022-11-03
- 公开(公告)号：EP4187613A3 公开(公告)日：2023-08-09
- 发明人： FIORENZA, James , PIEDRA, Daniel , SHTARGOT, Leonard , STEIGERWALD, F. Jacob
- 申请人： Analog Devices, Inc.
- 申请人地址： US Wilmington, MA 01887 One Analog Way
- 代理机构： Horler, Philip John
- 优先权： US202218049543 20221025
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/417 ; H01L29/423 ; H01L21/335 ; H01L29/778 ; H01L29/20
摘要：
A lateral GaN superjunction transistor or switching device that is configured to have higher breakdown voltage and lower on-resistance as compared to other GaN-based switching devices. The lateral GaN superjunction transistor includes a heavily doped buried implant region (hereinafter, "buried implant region") in the substrate underlying the transistor that operates as backside field plate (BFP) to control or reduce gate-drain electric fields at the surface of the transistor, thereby enabling the transistor to operate at higher voltages while reducing charge trapping and breakdown effects. The lateral GaN superjunction transistor operates similarly to a vertical silicon superjunction FET to enable operation of the transistor at higher voltages than other GaN or semiconductor devices, such as to enable the construction of faster or higher power electronic circuits.
公开/授权文献:
- EP4187613A2 LATERAL GALLIUM NITRIDE SUPERJUNCTION 公开/授权日：2023-05-31