基本信息:
- 专利标题： ONIUM SALT-CONTAINING PROCESSING SOLUTION FOR SEMICONDUCTOR WAFERS
- 申请号：EP20756178.8 申请日：2020-02-13
- 公开(公告)号：EP3926662A1 公开(公告)日：2021-12-22
- 发明人： KIKKAWA, Yuki , SATO, Tomoaki , SHIMODA, Takafumi , NEGISHI, Takayuki
- 申请人： Tokuyama Corporation
- 申请人地址： JP Shunan-shi, Yamaguchi 745-8648 1-1, Mikage-cho
- 代理机构： Jones, Nicholas Andrew
- 优先权： JP2019110984 20190614
- 国际公布： WO2020166677 20200820
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; C07C211/63 ; C07C381/12 ; C07F9/54 ; C09K13/04 ; C09K13/06 ; C23F1/40 ; H01L21/308 ; H01L21/3213 ; H01L21/768
摘要：
Provided is a treatment liquid for a semiconductor wafer or the like used in a process for forming a semiconductor. Namely a treatment liquid containing (A) a hypochlorite ion, and (B) an alkylammonium salt expressed by the following Formula (1), or the like is provided.
(In the Formula, "a" is an integer from 6 to 20; R 1 , R 2 , and R 3 are independently, for example, an alkyl group with a carbon number from 1 to 20; and X - is, for example, a chloride ion.)
(In the Formula, "a" is an integer from 6 to 20; R 1 , R 2 , and R 3 are independently, for example, an alkyl group with a carbon number from 1 to 20; and X - is, for example, a chloride ion.)
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/306 | ......化学或电处理，例如电解腐蚀 |