基本信息:
- 专利标题： THERMISTOR, METHOD FOR PRODUCING SAME, AND THERMISTOR SENSOR
- 申请号：EP19741400.6 申请日：2019-01-11
- 公开(公告)号：EP3745429A1 公开(公告)日：2020-12-02
- 发明人： SUZUKI, Syunpei , FUJITA, Toshiaki , CHITOSE, Norihisa , UOZUMI, Gakuji , TAKESHIMA, Kazuta , NAGATOMO, Noriaki
- 申请人： Mitsubishi Materials Corporation
- 申请人地址： 2-3, Marunouchi 3-chome Chiyoda-ku Tokyo 100-8117 JP
- 专利权人： Mitsubishi Materials Corporation
- 当前专利权人： Mitsubishi Materials Corporation
- 当前专利权人地址： 2-3, Marunouchi 3-chome Chiyoda-ku Tokyo 100-8117 JP
- 代理机构： Hoffmann Eitle
- 优先权： JP2018008237 20180122
- 国际公布： WO2019142939 20190725
- 主分类号： H01C7/04
- IPC分类号： H01C7/04 ; H01C7/00 ; H01C17/065
摘要：
Provided are a thermistor which can have a satisfactory thermistor film using a metal substrate as well as a high humidity resistance and heat resistance; a method for producing the same; and a thermistor sensor. The thermistor according to the present invention includes a metal substrate 2, an insulating base film 3 formed on the metal substrate, and a thermistor film 4 formed on the insulating base film, wherein the insulating base film is formed so as to fill the irregularities on the surface of the metal substrate where the surface roughness of the insulating base film is lower than that of the metal substrate. In the method for producing this thermistor includes the steps of: applying polysilazane on the metal substrate; drying the polysilazane to form the insulating base film of SiO x containing nitrogen; and depositing the thermistor film on the insulating base film.