发明公开
EP3742562A1 METHODS FOR OBTAINING AN N-TYPE DOPED METAL CHALCOGENIDE QUANTUM DOT SOLID-STATE ELEMENT WITH OPTICAL GAIN AND A LIGHT EMITTER INCLUDING THE ELEMENT, AND THE OBTAINED ELEMENT AND LIGHT EMITTER
有权
基本信息:
- 专利标题： METHODS FOR OBTAINING AN N-TYPE DOPED METAL CHALCOGENIDE QUANTUM DOT SOLID-STATE ELEMENT WITH OPTICAL GAIN AND A LIGHT EMITTER INCLUDING THE ELEMENT, AND THE OBTAINED ELEMENT AND LIGHT EMITTER
- 申请号：EP19382418.2 申请日：2019-05-23
- 公开(公告)号：EP3742562A1 公开(公告)日：2020-11-25
- 发明人： KONSTANTATOS, Gerasimos , CHRISTODOULOU, Sotirios
- 申请人： Fundació Institut de Ciències Fotòniques , Institució Catalana De Recerca I Estudis Avançats (ICREA)
- 申请人地址： Parc Mediterrani de la Tecnologia Av. Carl Friedrich Gauss 3 08860 Castelldefels ES
- 专利权人： Fundació Institut de Ciències Fotòniques,Institució Catalana De Recerca I Estudis Avançats (ICREA)
- 当前专利权人： Fundació Institut de Ciències Fotòniques,Institució Catalana De Recerca I Estudis Avançats (ICREA)
- 当前专利权人地址： Parc Mediterrani de la Tecnologia Av. Carl Friedrich Gauss 3 08860 Castelldefels ES
- 代理机构： Ponti & Partners, S.L.P
- 主分类号： H01S3/16
- IPC分类号： H01S3/16 ; C09K11/88 ; H01S5/34 ; H01S5/347 ; C09K11/02
摘要：
The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising:
- forming a metal chalcogenide quantum dot solid-state element, and
- carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises:
- a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or
- a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots;
and
- providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping.
The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.
- forming a metal chalcogenide quantum dot solid-state element, and
- carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises:
- a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or
- a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots;
and
- providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping.
The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.