发明公开
EP3553829A1 A SILICON PHOTOVOLTAIC CELL AND A METHOD FOR MANUFACTURING SILICON PHOTOVOLTAIC CELLS
有权
基本信息:
- 专利标题： A SILICON PHOTOVOLTAIC CELL AND A METHOD FOR MANUFACTURING SILICON PHOTOVOLTAIC CELLS
- 申请号：EP18461549.0 申请日：2018-04-13
- 公开(公告)号：EP3553829A1 公开(公告)日：2019-10-16
- 发明人： Putynkowski, Grzegorz , Sobkow, Jacek , Bartmanski, Marcin , Leszczynska, Karolina , Pietruszka, Rafal , Witkowski, Bartlomiej , Godlewski, Marek , Majchrowicz, Aleksander
- 申请人： Centrum Badan i Rozwoju Technologii dla Przemyslu S.A. , Hanplast Sp. z.o.o. , Instytut Fizyki Polskiej Akademii Nauk , Godlewski, Marek
- 申请人地址： ul. Ziota 59 00-120 Warszawa PL
- 专利权人： Centrum Badan i Rozwoju Technologii dla Przemyslu S.A.,Hanplast Sp. z.o.o.,Instytut Fizyki Polskiej Akademii Nauk,Godlewski, Marek
- 当前专利权人： Centrum Badan i Rozwoju Technologii dla Przemyslu S.A.,Hanplast Sp. z.o.o.,Instytut Fizyki Polskiej Akademii Nauk,Godlewski, Marek
- 当前专利权人地址： ul. Ziota 59 00-120 Warszawa PL
- 代理机构： Kancelaria Eupatent.pl Sp. z.o.o
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224
摘要：
A silicon photovoltaic cell, comprising a semiconductor p-type substrate, having at its rear side a PERC structure with an AlOx and SiNx passivating layer and back electric ohmic contacts, characterized in that on the front side of the silicon substrate (24) there is a tunnel layer (25), on which there is a layer of ZnO nanorods having a height of 10 to 2000 nm, that is deposited with a ZnO:Mg layer (26) having a thickness of 1 to 2000 nm, which is deposited with a ZnO:AI transparent conductive layer, upon which front electric ohmic contacts (28) are deposited.