发明公开
EP3493249A1 GATE LINE PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
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基本信息:
- 专利标题： GATE LINE PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- 申请号：EP18203569.1 申请日：2018-10-30
- 公开(公告)号：EP3493249A1 公开(公告)日：2019-06-05
- 发明人： HO, Byron , HATTENDORF, Michael L. , AUTH, Christopher P.
- 申请人： INTEL Corporation
- 申请人地址： 2200 Mission College Blvd. Santa Clara, CA 95054 US
- 专利权人： INTEL Corporation
- 当前专利权人： INTEL CORPORATION
- 当前专利权人地址： INTEL CORPORATION
- 代理机构： Goddar, Heinz J.
- 优先权： US201762593149P 20171130; US201715859353 20171230
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L27/088
摘要：
Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first silicon fin having a longest dimension along a first direction. A second silicon fin having a longest dimension is along the first direction. An insulator material is between the first silicon fin and the second silicon fin. A gate line is over the first silicon fin and over the second silicon fin along a second direction, the second direction orthogonal to the first direction, the gate line having a first side and a second side, wherein the gate line has a discontinuity over the insulator material, the discontinuity filled by a dielectric plug.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |
| --------------H01L21/782 | ....制造多个器件，每一个由单个电路元件组成 |
| ----------------H01L21/822 | .....衬底是采用硅工艺的半导体的 |
| ------------------H01L21/8222 | ......双极工艺 |
| --------------------H01L21/8234 | .......MIS工艺 |