基本信息:
- 专利标题： COMPOSITION FOR POST CHEMICAL-MECHANICAL-POLISHING CLEANING
- 申请号：EP16819532.9 申请日：2016-12-20
- 公开(公告)号：EP3394879A2 公开(公告)日：2018-10-31
- 发明人： DÄSCHLEIN, Christian , SIEBERT, Max , LAUTER, Michael , PRZYBYLSKI, Piotr , PROELSS, Julian , KLIPP, Andreas , GUEVENC, Haci Osman , LEUNISSEN, Leonardus , BAUMANN, Roelf-Peter , WEI, Te Yu
- 申请人： BASF SE
- 申请人地址： Carl-Bosch-Strasse 38 67056 Ludwigshafen am Rhein DE
- 专利权人： BASF SE
- 当前专利权人： BASF SE
- 当前专利权人地址： Carl-Bosch-Strasse 38 67056 Ludwigshafen am Rhein DE
- 代理机构： BASF IP Association
- 优先权： EP15201935 20151222
- 国际公布： WO2017108748 20170629
- 主分类号： H01L21/321
- IPC分类号： H01L21/321 ; C11D3/00 ; C11D3/37 ; C11D11/00
摘要：
Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly- acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, /so-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/3205 | ......非绝缘层的沉积，例如绝缘层上的导电层、电阻层（器件内部的通电装置入H01L23/52）；这些层的后处理 |
| --------------------H01L21/321 | .......后处理 |