基本信息:
- 专利标题： CAPACITOR, IMAGE SENSOR CIRCUIT AND FABRICATION METHODS THEREOF
- 申请号：EP17207544.2 申请日：2017-12-15
- 公开(公告)号：EP3340310A1 公开(公告)日：2018-06-27
- 发明人： LIANG, Xin , WANG, Chong
- 申请人： Semiconductor Manufacturing International Corporation (Shanghai) , Semiconductor Manufacturing International Corporation (Beijing)
- 申请人地址： No. 18, Zhangjiang Road Pudong New Area Shanghai 201203 CN
- 专利权人： Semiconductor Manufacturing International Corporation (Shanghai),Semiconductor Manufacturing International Corporation (Beijing)
- 当前专利权人： Semiconductor Manufacturing International Corporation (Shanghai),Semiconductor Manufacturing International Corporation (Beijing)
- 当前专利权人地址： No. 18, Zhangjiang Road Pudong New Area Shanghai 201203 CN
- 代理机构： Klunker IP Patentanwälte PartG mbB
- 优先权： CN201611198711 20161222
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/94 ; H01L49/02 ; H01L27/146
摘要：
A capacitor, an image sensor circuit and fabricating methods are provided. The method includes providing a base substrate including a trench region and a body region adjacent to the trench region. The method also includes forming a first trench structure and a second trench structure on the first trench structure, in the base substrate in the trench region. In addition, the method includes forming a dielectric layer on a sidewall surface and a bottom surface of the first trench structure and an electrode layer on the dielectric layer in the first trench structure. Further, the method includes forming an isolation layer filling the second trench structure.