基本信息:
- 专利标题： METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE-CRYSTAL WAFER
- 申请号：EP16830636.3 申请日：2016-07-29
- 公开(公告)号：EP3330415A1 公开(公告)日：2018-06-06
- 发明人： AIGO, Takashi , ITO, Wataru , FUJIMOTO, Tatsuo
- 申请人： Nippon Steel & Sumitomo Metal Corporation
- 申请人地址： 6-1, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8071 JP
- 专利权人： Nippon Steel & Sumitomo Metal Corporation
- 当前专利权人： RESONAC CORPORATION
- 当前专利权人地址： RESONAC CORPORATION
- 代理机构： Vossius & Partner Patentanwälte Rechtsanwälte mbB
- 优先权： JP2015149742 20150729
- 国际公布： WO2017018533 20170202
- 主分类号： C30B29/36
- IPC分类号： C30B29/36 ; H01L29/161
摘要：
A method for producing an epitaxial silicon carbide single crystal wafer comprised of a silicon carbide single crystal substrate having a small off angle on which a high quality silicon carbide single crystal film with little basal plane dislocations is provided, that is, a method for producing an epitaxial silicon carbide single crystal wafer epitaxially growing silicon carbide on a silicon carbide single crystal substrate using a thermal CVD method, comprising supplying an etching gas inside the epitaxial growth reactor to etch the surface of the silicon carbide single crystal substrate so that the arithmetic average roughness Ra value becomes 0.5 nm to 3.0 nm, then starting epitaxial growth to convert 95% or more of the basal plane dislocations at the surface of the silicon carbide single crystal substrate to threading edge dislocations.