![PROCEDE DE COLLAGE DIRECT AVEC AUTO-ALIGNEMENT PAR ULTRASONS](/ep/2018/06/06/EP3329511A1/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: PROCEDE DE COLLAGE DIRECT AVEC AUTO-ALIGNEMENT PAR ULTRASONS
- 专利标题(英):EP3329511A1 - Method for direct bonding with self-alignment using ultrasound
- 申请号:EP16751221.9 申请日:2016-07-26
- 公开(公告)号:EP3329511A1 公开(公告)日:2018-06-06
- 发明人: FOURNEL, Frank , BAILLIN, Xavier , CHERAMY,Séverine , LEDUC, Patrick , SANCHEZ, Loic
- 申请人: Commissariat à l'énergie atomique et aux énergies alternatives
- 申请人地址: Bâtiment "Le Ponant D" 25 rue Leblanc 75015 Paris FR
- 专利权人: Commissariat à l'énergie atomique et aux énergies alternatives
- 当前专利权人: Commissariat à l'énergie atomique et aux énergies alternatives
- 当前专利权人地址: Bâtiment "Le Ponant D" 25 rue Leblanc 75015 Paris FR
- 代理机构: Brevalex
- 优先权: FR1557402 20150731
- 国际公布: WO2017021231 20170209
- 主分类号: H01L21/60
- IPC分类号: H01L21/60
摘要:
The invention relates to a method for the direct bonding of an electronic chip (100) onto a substrate (102) or another electronic chip, said method comprising the steps of: carrying out a hydrophilic treatment of a portion (105) of a surface of the electronic chip and of a portion (110) of a surface (108) of the substrate or of the other electronic chip; depositing an aqueous fluid (112) on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip; said method also comprises, during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.
公开/授权文献:
- EP3329511B1 PROCEDE DE COLLAGE DIRECT AVEC AUTO-ALIGNEMENT PAR ULTRASONS 公开/授权日:2019-07-03
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
--------------H01L21/60 | ....引线或其他导电构件的连接,用于工作时向或由器件传导电流 |