基本信息:
- 专利标题： NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
- 申请号：EP17184446.7 申请日：2017-08-02
- 公开(公告)号：EP3279729B1 公开(公告)日：2018-11-28
- 发明人： MASUNAGA, Keiichi , WATANABE, Satoshi , KOTAKE, Masaaki , YAMADA, Kenji , OHASHI, Masaki
- 申请人： Shin-Etsu Chemical Co., Ltd.
- 申请人地址： 6-1, Ohtemachi 2-chome Chiyoda-ku Tokyo JP
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： 6-1, Ohtemachi 2-chome Chiyoda-ku Tokyo JP
- 代理机构： Ter Meer Steinmeister & Partner
- 优先权： JP2016154694 20160805
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/039 ; G03F7/20 ; G03F7/038
摘要：
A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.