基本信息:
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 申请号：EP17173147.4 申请日：2017-05-26
- 公开(公告)号：EP3273466A2 公开(公告)日：2018-01-24
- 发明人： YAJIMA, Akira , YAMADA, Yoshiaki
- 申请人： Renesas Electronics Corporation
- 申请人地址： 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 JP
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 JP
- 代理机构： Moore, Graeme Patrick
- 优先权： JP2016127210 20160628
- 主分类号： H01L21/56
- IPC分类号： H01L21/56 ; H01L23/31 ; H01L23/29 ; H01L23/485 ; H01L23/525
摘要：
The semiconductor device includes: a semiconductor substrate; a conductor layer formed over the semiconductor substrate and having an upper surface and a lower surface; a conductive pillar formed on the upper surface of the conductor layer and having an upper surface, a lower surface, and a sidewall; a protection film covering the upper surface of the conductor layer and having an opening which exposes the upper surface and the sidewall of the conductive pillar; and a protection film covering the sidewall of the conductive pillar. Then, in plan view, the opening of the protection film is wider than the upper surface of the conductive pillar and exposes an entire region of an upper surface of the conductive pillar.
公开/授权文献:
- EP3273466A3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 公开/授权日：2018-04-11
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
| --------------H01L21/56 | ....封装，例如密封层、涂层 |