A thyristor, in particular a phase control thyristor, is disclosed with comprises: a) a semiconductor slab, in particular a semiconductor wave or die, in which a thyristor structure is formed, b) a cathode metallization formed on a cathode region on a cathode side surface of the semiconductor slab, c) a gate metallization formed on a gate region on the cathode side surface of the semiconductor slab, d) a plurality of N discrete emitter shorts, arranged at points Pi in the cathode region, said points having point locations xi, with iε{1; . . . ; N}, e) the points Pl defining a Delaunay triangulation comprising a plurality of triangles Tj with jε{1; . . . ; M), wherein f) for a first subset of triangles Tl with lεS1⊂{1; . . . ; M), g) with each triangle Tl being characterized by a geometric quantity having values qT,l with lεS1⊂{1; . . . ; M), said geometric quantity having a mean value μ, and i) a coefficient of variation of the values qT,l with lεS1 is smaller than 0.1, preferably smaller than 0.05, and/or ii) an absolute value of a skewedness of the geometric quantities qT,l with lεS1 is smaller than 5, preferably smaller than 1, and/or iii) a Kurtosis of the geometric quantities qT,l with lεS1 is smaller than 20, preferably smaller than 10, and h) for a second subset of triangles Tm with mεS2⊂S1, for which the respective geometric quantities qT,m with mεS2 deviate from the mean value by more than a predetermined amount, in particular by more than 30%, (1) a quotient of a standard deviation of the quantities qT,m with mεS2 and a mean squared value of the geometric quantity qT,l with lεS1 is less than 1 or less than 0.1, and/or a quotient of a number of triangles in the second subset and a number of triangles in the first subset is less than