发明公开
EP3163602A3 METHOD OF PRODUCING A SEMICONDUCTOR DEVICE BY BONDING SILVER ON A SURFACE OF A SEMICONDUCTOR ELEMENT WITH SILVER ON A SURFACE OF A BASE IN AIR OR IN AN OXYGEN ENVIRONMENT
审中-公开
基本信息:
- 专利标题： METHOD OF PRODUCING A SEMICONDUCTOR DEVICE BY BONDING SILVER ON A SURFACE OF A SEMICONDUCTOR ELEMENT WITH SILVER ON A SURFACE OF A BASE IN AIR OR IN AN OXYGEN ENVIRONMENT
- 专利标题（中）：在空气中或在氧气环境中在银基表面上用银键合半导体元件的表面上的银来制造半导体装置的方法
- 申请号：EP16002297.6 申请日：2010-01-20
- 公开(公告)号：EP3163602A3 公开(公告)日：2017-08-09
- 发明人： Kuramoto, Masafumi , Ogawa, Satoru , Niwa, Miki
- 申请人： Nichia Corporation
- 申请人地址： 491-100 Oka, Kaminaka-cho Anan-Shi Tokushima 774-8601 JP
- 专利权人： Nichia Corporation
- 当前专利权人： Nichia Corporation
- 当前专利权人地址： 491-100 Oka, Kaminaka-cho Anan-Shi Tokushima 774-8601 JP
- 代理机构： Grünecker Patent- und Rechtsanwälte PartG mbB
- 优先权： JP2009013713 20090123
- 主分类号： H01L21/58
- IPC分类号： H01L21/58 ; H01L21/60 ; H01L33/40 ; H01L33/48 ; H01L33/62 ; H01S5/022
摘要：
An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver (520, 620, 720) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a base (500, 600, 700) and silver (140, 240, 340) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method comprising the steps of arranging the semiconductor element (100, 200, 300) on the base (500, 600, 700) such that said silver (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with said silver (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700) in air or in an oxygen environment. The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.
摘要（中）：
本发明的目的是提供一种制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定导电材料组合物获得导电构件。 本发明公开了一种用于制造半导体器件的方法，其中通过银溅射，银气相沉积或镀银形成并设置在基底（500,600,700）和银（140,160）的表面上的银（520,620,720） （100,200,300）的表面上通过银溅射，银气相沉积或镀银形成的半导体元件（100,200,300）的方法包括以下步骤：将半导体元件（100,200,300） ）设置在所述基座（500,600,700）上，使得设置在所述半导体元件（100,200,300）的表面上的所述银（140,240,340）与所述银（520,620,720）接触， 设置在所述基座（500,600,700）的表面上，通过对所述半导体元件（500,600,700）施加压力或超声波振动来暂时接合所述半导体元件（100,200,300）和所述基座（500,600,700） （100,200,300）或所述基座（500,600,700）之间，并且永久地将所述半导体元件（100,200,300）和所述半导体元件 通过在空气中或在氧气环境中向半导体元件（100,200,300）和基座（500,600,700）施加具有150至900℃的温度的热量，从而在基座（500,600,700）上形成基座（500,600,700）。 暂时键合的步骤和永久键合的步骤可以同时进行。 在临时键合步骤之前，半导体元件（100,200,300）和基座（500,600,700）可预先在150至900℃加热。 临时粘合步骤之前可施加5至50MPa的压力。 半导体元件（100,200,300）可以是发光半导体元件。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
| --------------H01L21/58 | ....半导体器件在支架上的安装 |