
基本信息:
- 专利标题: MANUFACTURABLE LASER DIODE
- 专利标题(中):ERZEUGBAR LASERDIODE
- 申请号:EP15746370.4 申请日:2015-02-05
- 公开(公告)号:EP3105829A1 公开(公告)日:2016-12-21
- 发明人: MCLAURIN, Melvin , SZTEIN, Alexander , HSU, Po Shan , GOUTAIN, Eric , STEIGERWALD, Dan , RARING, James W.
- 申请人: Soraa Laser Diode Inc.
- 申请人地址: 485 Pine Avenue Goleta, California 93117 US
- 专利权人: Soraa Laser Diode Inc.
- 当前专利权人: KYOCERA SLD LASER, INC.
- 当前专利权人地址: KYOCERA SLD LASER, INC.
- 代理机构: Clark, Jane Anne
- 优先权: US201414176403 20140210; US201414312427 20140623; US201514600506 20150120
- 国际公布: WO2015120118 20150813
- 主分类号: H01S5/323
- IPC分类号: H01S5/323 ; H01S5/42 ; H01L21/78
摘要:
A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device. Each of the plurality of dice are transferred to one or more carrier substrates, and at least one of the plurality of dice are processed on the one or more carrier substrates. The die are packaged with the substrate to configure a module device.
摘要(中):
多发射体激光二极管器件包括从载体晶片分离的载体芯片。 载体芯片具有长度和宽度,宽度限定第一间距。 该器件还包括从衬底转移到载体芯片并在键合区附接到载体芯片的多个外延台面区域。 每个外延台面区域以基本上平行的构造布置在载体芯片上,并以限定相邻外延台面区域之间的距离的第二间距定位。 多个外延台面区域中的每一个包括外延材料,其包括n型包层区域,具有至少一个有源层区域的有源区域和p型包层区域。 该器件还包括一个或多个激光二极管条纹区域,每个激光二极管条纹区域具有形成空腔区域的一对小面。
公开/授权文献:
- EP3105829B1 MANUFACTURABLE LASER DIODE 公开/授权日:2021-06-23
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01S | 利用受激发射的器件 |
------H01S5/00 | 半导体激光器 |
--------H01S5/02 | .基本上不涉及激光作用的结构零件或组件 |
----------H01S5/32 | ..含有PN结的,例如异结的或双异质结的结构 |
------------H01S5/323 | ...用AⅢBⅤ族化合物材料的,例如AlGaAs-激光器 |