基本信息:
- 专利标题： HALF BRIDGE CIRCUIT
- 申请号：EP14859039 申请日：2014-09-10
- 公开(公告)号：EP3063859A4 公开(公告)日：2018-02-14
- 发明人： HUGHES BRIAN , BOUTROS KARIM S , ZEHNDER DANIEL M , KHALIL SAMEH G , CHU RONGMING
- 申请人： HRL LAB LLC
- 专利权人： HRL LAB LLC
- 当前专利权人： HRL LAB LLC
- 优先权： US201314065715 2013-10-29
- 主分类号： H01L23/64
- IPC分类号： H01L23/64 ; H02M1/00 ; H01L25/16 ; H02M7/00
摘要：
A half bridge circuit including an isolation substrate, a metal layer on one surface of the isolation substrate, a power loop substrate on the metal layer, an upper switch on the power loop substrate, a lower switch on the power loop substrate and coupled to the upper switch, a capacitor on the power loop substrate and coupled to the upper switch, a first via through the power loop substrate and coupled between the lower switch and the metal layer, and a second via through the power loop substrate and coupled between the capacitor and the metal layer, wherein the power loop substrate has a height and separates the metal layer from the upper switch, lower switch and capacitor by the height.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/552 | .防辐射保护装置，例如光 |
| ----------H01L23/64 | ..阻抗装置 |