基本信息:
- 专利标题： METHOD FOR DEPOSITING AN ALUMINIUM NITRIDE LAYER
- 专利标题（中）：PROCESS FOR A氮化铝的分离
- 申请号：EP13777342.0 申请日：2013-08-29
- 公开(公告)号：EP2890835A1 公开(公告)日：2015-07-08
- 发明人： CASTALDI, Lorenzo , KRATZER, Martin , FELZER, Heinz , MAMAZZA, Robert Jr. , HEINZ, Bernd
- 申请人： Oerlikon Advanced Technologies AG
- 申请人地址： Iramali 18 9496 Balzers LI
- 专利权人： Oerlikon Advanced Technologies AG
- 当前专利权人： EVATEC AG
- 当前专利权人地址： EVATEC AG
- 代理机构： Moore, Joanne Camilla
- 优先权： US201261695551P 20120831
- 国际公布： WO2014033649 20140306
- 主分类号： C30B23/02
- IPC分类号： C30B23/02 ; C30B29/40 ; H01L21/02
摘要：
A method for depositing an aluminium nitride layer on a substrate is provided that comprises: providing a silicon substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; depositing an aluminum film onto the conditioned surface of the substrate by a sputtering method under an atmosphere of Argon and depositing an epitaxial aluminium nitride layer on the aluminum film by a sputtering method under an atmosphere of Nitrogen and Argon.
公开/授权文献:
- EP2890835B1 METHOD FOR DEPOSITING AN ALUMINIUM NITRIDE LAYER 公开/授权日：2021-09-08