发明公开
EP2824070A1 METHOD FOR MANUFACTURING HIGHLY PURE SILICON, HIGHLY PURE SILICON OBTAINED BY THIS METHOD, AND SILICON RAW MATERIAL FOR MANUFACTURING HIGHLY PURE SILICON
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基本信息:
- 专利标题： METHOD FOR MANUFACTURING HIGHLY PURE SILICON, HIGHLY PURE SILICON OBTAINED BY THIS METHOD, AND SILICON RAW MATERIAL FOR MANUFACTURING HIGHLY PURE SILICON
- 专利标题（中）：过程在这个过程中产生高纯度硅得到高纯度的硅和硅为原料的高纯度硅生产
- 申请号：EP12870715.5 申请日：2012-03-08
- 公开(公告)号：EP2824070A1 公开(公告)日：2015-01-14
- 发明人： TOKUMARU , Shinji , HIYOSHI , Masataka , KONDO , Jiro , DOHNOMAE, Hitoshi , KISHIDA , Yutaka , NAKAZAWA , Shigeru , ONOUE , Kozo
- 申请人： Silicio Ferrosolar S.L.
- 申请人地址： Paseo de la Castellana 259D 28046 Madrid ES
- 专利权人： Silicio Ferrosolar S.L.
- 当前专利权人： FERROSOLAR R&D, S.L.; ES
- 当前专利权人地址： FERROSOLAR R&D, S.L.; ES
- 代理机构： Elzaburu S.L.P.
- 国际公布： WO2013132629 20130912
- 主分类号： C01B33/037
- IPC分类号： C01B33/037 ; C01B33/02 ; C01B33/021
摘要：
Provided are: a method for manufacturing highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method; and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.
摘要（中）：
本发明提供：用于通过熔融硅单向凝固制造高纯度硅的方法，并能廉价且工业上容易地制造高纯度的硅做具有低的氧浓度和碳浓度低并适合于应用：如制造太阳能电池; 高纯度的硅通过该方法获得; 和有机硅原料制造高纯度硅。 一种用于使用熔融硅含有100至1000 ppmw的碳和0.5〜2000 ppmw的锗作为原料当制造通过在铸造容器单向凝固的熔融硅原料的高纯度硅制造高纯硅的方法，所述高纯度的硅获得 通过该方法，并且硅原料制造高纯度硅。
公开/授权文献:
- EP2824070B1 METHOD FOR MANUFACTURING HIGHLY PURE SILICON 公开/授权日：2018-12-12