发明公开
EP2782123A1 TRANSFER SUBSTRATE FOR FORMING METAL WIRING LINE AND METHOD FOR FORMING METAL WIRING LINE BY MEANS OF SAID TRANSFER SUBSTRATE
有权
基本信息:
- 专利标题： TRANSFER SUBSTRATE FOR FORMING METAL WIRING LINE AND METHOD FOR FORMING METAL WIRING LINE BY MEANS OF SAID TRANSFER SUBSTRATE
- 专利标题（中）：传输衬底形成用于形成金属布线符合这一转移基质金属接线和方法
- 申请号：EP12849763.3 申请日：2012-11-08
- 公开(公告)号：EP2782123A1 公开(公告)日：2014-09-24
- 发明人： OGASHIWA, Toshinori , KURITA, Masaaki , NISHIMORI, Takashi , KANEHIRA, Yukio
- 申请人： Tanaka Kikinzoku Kogyo K.K.
- 申请人地址： 7-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100-6422 JP
- 专利权人： Tanaka Kikinzoku Kogyo K.K.
- 当前专利权人： Tanaka Kikinzoku Kogyo K.K.
- 当前专利权人地址： 7-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100-6422 JP
- 代理机构： Boult Wade Tennant
- 优先权： JP2011252138 20111118
- 国际公布： WO2013073440 20130523
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/12 ; H05K1/09 ; H05K3/20
摘要：
A transfer substrate for transferring a metal wiring material to a transfer target including a substrate, at least one metal wiring material formed on the substrate, at least one coating layer formed on a surface of the metal wiring material, and an underlying metal film formed between the substrate and the metal wiring material, in which the metal wiring material is a compact formed by sintering metal powder such as gold powder having a purity of 99.9 wt% or more and an average particle size of 0.01 µm to 1.0 µm, and the coating layer is a predetermined metal such as gold or an alloy having a different composition from that of the metal wiring material and has a total thickness of 1 µm or less, and the metal underlying film is made of a predetermined metal such as gold or an alloy. The transfer substrate can lower heating temperature on the transfer target side.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
| --------------H01L21/60 | ....引线或其他导电构件的连接，用于工作时向或由器件传导电流 |