![METHOD FOR FORMING DIAMOND-LIKE CARBON FILM ON METAL SUBSTRATES](/ep/2018/08/01/EP2735624B1/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: METHOD FOR FORMING DIAMOND-LIKE CARBON FILM ON METAL SUBSTRATES
- 申请号:EP12815216.2 申请日:2012-06-18
- 公开(公告)号:EP2735624B1 公开(公告)日:2018-08-01
- 发明人: TANAKA, Katsumi , CHOO, Cheow Keong
- 申请人: The University of Electro-Communications
- 申请人地址: 1-5-1, Chofugaoka Chofu-shi Tokyo 182-8585 JP
- 专利权人: The University of Electro-Communications
- 当前专利权人: The University of Electro-Communications
- 当前专利权人地址: 1-5-1, Chofugaoka Chofu-shi Tokyo 182-8585 JP
- 代理机构: Hoffmann Eitle
- 优先权: JP2011160258 20110721; JP2012087395 20120406
- 国际公布: WO2013011784 20130124
- 主分类号: C23C16/26
- IPC分类号: C23C16/26 ; C23C16/02 ; C23C16/46 ; C23C16/04
摘要:
An objective is to provide a metal object with diamond-like carbon film including a diamond-like carbon film easily formed on metal and a method for forming the diamond-like carbon film. A metallic film formation target 30 which is an object on which a diamond-like carbon film is to be formed is placed in a flow channel 14 through which film formation gas containing methane gas flows. The film formation gas RG is caused to flow at a predetermined flow rate through the flow channel 14 during the process of raising the temperature of the film formation target 30 from room temperature to a predetermined temperature. The film formation gas RG is thereby reacted with impurities in a film formation target surface 30f for removal of the impurities from the film formation target surface 30f and is further reacted with metallic elements exposed by the removal of impurities, thus forming a diamond-like carbon film 34 on the film formation target surface 30f.