基本信息:
- 专利标题： INTERBAND CASCADE LASERS WITH ENGINEERED CARRIER DENSITIES
- 专利标题（中）：INTERBAND级联激光器具有工程载体密度
- 申请号：EP12774690.7 申请日：2012-03-16
- 公开(公告)号：EP2702648B1 公开(公告)日：2018-05-09
- 发明人： VURGAFTMAN, Igor , MEYER, Jerry, R. , CANEDY, Chadwick, Lawrence , BEWLEY, William, W. , KIM, Chul, Soo , KIM, Mijin , MERRITT, Charles, D.
- 申请人： The Government of the United States of America as represented by the Secretary of the Navy
- 申请人地址： Naval Research Laboratory 4555 Overlook Avenue, S.W. Code 1008.2 Washington, DC 20375 US
- 专利权人： The Government of the United States of America as represented by the Secretary of the Navy
- 当前专利权人： The Government of the United States of America as represented by the Secretary of the Navy
- 当前专利权人地址： Naval Research Laboratory 4555 Overlook Avenue, S.W. Code 1008.2 Washington, DC 20375 US
- 代理机构： Higgs, Jonathan
- 优先权： US201161477191P 20110420; US201261596870P 20120209
- 国际公布： WO2012145103 20121026
- 主分类号： H01S5/34
- IPC分类号： H01S5/34 ; H01S5/30 ; B82Y20/00
摘要：
Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
公开/授权文献:
- EP2702648A1 INTERBAND CASCADE LASERS WITH ENGINEERED CARRIER DENSITIES 公开/授权日：2014-03-05