发明公开
EP2686875A2 METHODS OF FORMING AT LEAST ONE CONDUCTIVE ELEMENT, METHODS OF FORMING A SEMICONDUCTOR STRUCTURE, METHODS OF FORMING A MEMORY CELL AND RELATED SEMICONDUCTOR STRUCTURES
有权
基本信息:
- 专利标题： METHODS OF FORMING AT LEAST ONE CONDUCTIVE ELEMENT, METHODS OF FORMING A SEMICONDUCTOR STRUCTURE, METHODS OF FORMING A MEMORY CELL AND RELATED SEMICONDUCTOR STRUCTURES
- 专利标题（中）：方法制造至少一个导电元件，一种用于生产半导体器件制造方法的存储单元与相关半导体结构
- 申请号：EP12757934.0 申请日：2012-03-13
- 公开(公告)号：EP2686875A2 公开(公告)日：2014-01-22
- 发明人： TANG, Sanh D. , SILLS, Scott E. , WEST, Whitney L. , GOODWIN, Rob B. , SINHA, Nishant
- 申请人： Micron Technology, Inc.
- 申请人地址： 8000 South Federal Way Mail Stop 525 Boise, ID 83707-0006 US
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： 8000 South Federal Way Mail Stop 525 Boise, ID 83707-0006 US
- 代理机构： Maury, Richard Philip
- 优先权： US201113050725 20110317
- 国际公布： WO2012125610 20120920
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/8239
摘要：
Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the first conductive material. The methods enable formation of silver containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.
摘要（中）：
如互连和电极，半导体结构和存储器单元：形成导电元件，颜色的方法。 所述方法包括：形成第一导电材料和第二导电材料中的至少一个开口的一部分，其包括银和执行抛光工艺以填充与所述第一和第二导电材料中的至少一个的所述至少一个开口。 退火工艺可以被执行，以形成的银和第一导电材料的混合物或合金。 所述方法使得能够形成含银具有减小的尺寸（例如，小于约20nm）的导电元件。 将所得的导电性元件具有所希望的电阻率。 该方法可用于，例如，以形成用于电互连连接有源器件和形成电极的存储器单元。 因此，一种半导体结构，包括寻求一个导电结构的存储单元是游离缺失盘。
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/28 | ....用H01L21/20至H01L21/268各组不包含的方法或设备在半导体材料上制造电极的 |