基本信息:
- 专利标题： NOBLE METAL PASTE FOR BONDING OF SEMICONDUCTOR ELEMENT
- 专利标题（中）：贵金属膏结合半导体元件
- 申请号：EP11830573 申请日：2011-09-30
- 公开(公告)号：EP2626893A4 公开(公告)日：2016-08-03
- 发明人： MIYAIRI MASAYUKI , AKIYAMA NOBUYUKI , INAGAKI KATSUJI , OGASHIWA TOSHINORI
- 申请人： TANAKA PRECIOUS METAL IND
- 专利权人： TANAKA PRECIOUS METAL IND
- 当前专利权人： TANAKA PRECIOUS METAL IND
- 优先权： JP2010228279 2010-10-08
- 主分类号： H01L21/52
- IPC分类号： H01L21/52 ; B23K35/30 ; H01B1/22 ; H01L23/00
摘要：
A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass% or more and an average particle diameter of 0.1 to 0.5 µm, the organic solvent has a boiling point of 200 to 350°C, and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23°C by means of a rotational viscometer is 6.0 or more.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
| --------------H01L21/52 | ....半导体在容器中的安装 |