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基本信息:
- 专利标题: ADVANCED CIRCUIT ARRANGEMENT OF TRANSFORMERLESS 1 PHASE PV INVERTER
- 专利标题(中):先进的电路安排变压器地段单相光伏逆变器
- 申请号:EP11818318.5 申请日:2011-08-03
- 公开(公告)号:EP2606567A2 公开(公告)日:2013-06-26
- 发明人: PAIL, CeuPaai, Erno H-1025
- 申请人: Pail, Ceu , Hyundai Heavy Industries Co., Ltd.
- 申请人地址: Paai, Erno H-1025 Felsozolamali u-80 Budapest HU
- 专利权人: Pail, Ceu,Hyundai Heavy Industries Co., Ltd.
- 当前专利权人: Pail, Ceu,Hyundai Heavy Industries Co., Ltd.
- 当前专利权人地址: Paai, Erno H-1025 Felsozolamali u-80 Budapest HU
- 代理机构: Delorme, Nicolas
- 优先权: HU1045527 20100817
- 国际公布: WO2012023718 20120223
- 主分类号: H02M7/48
- IPC分类号: H02M7/48 ; H02M7/521
摘要:
The invention is an advanced circuit arrangement for 1 phase, transformerless PV inverter what outputs being connected through two reactors (L1, L2) to the utility network whilst an energy storage capacitor (C) is connected to the PV array (P) such a way that the energy storage capacitor's (C) + and - terminals are connected to two half bridge (I, II) creating an H bridge so that the AC node of one half bridge (I) connected to the anode of a diode (D1) and the cathode of a diode (D2) whilst AC node of the other half bridge (II) is connected to an anode of a diode (D3) and a cathode of a diode (D4) whilst the four diodes (D1,D2,D3,D4) form a diode bridge and this diode bridge positive node is connected to a transistor's (V5) collector and an anode of a diode (D5), the cathode of the diode (D5) being connected to the energy storage capacitor's (C) positive terminal whilst the negative node of diode bridge (D1,D2,D3,D4) being connected to an emitter of a transistor (V5) and a diode's (D6) cathode, the anode of the diode (D6) is connected to the negative terminal of the energy storage capacitor (C).
IPC结构图谱:
H | 电学 |
--H02 | 发电、变电或配电 |
----H02M | 用于交流和交流之间、交流和直流之间、或直流和直流之间的转换以及用于与电源或类似的供电系统一起使用的设备;直流或交流输入功率至浪涌输出功率的转换;以及它们的控制或调节 |
------H02M7/00 | 交流功率输入变换为直流功率输出;直流功率输入变换为交流功率输出 |
--------H02M7/02 | .不可逆的交流功率输入变换为直流功率输出 |
----------H02M7/44 | ..利用静态变换器的 |
------------H02M7/48 | ...应用有控制极的放电管或有控制极的半导体器件的 |