基本信息:
- 专利标题： CONDUCTIVITY BASED SELECTIVE ETCH FOR GAN DEVICES AND APPLICATIONS THEREOF
- 专利标题（中）：作者GaN器件及其应用对电导率基于选择性刻蚀
- 申请号：EP11737629.3 申请日：2011-01-27
- 公开(公告)号：EP2529394A1 公开(公告)日：2012-12-05
- 发明人： HAN, Jung , SUN, Qian , ZHANG, Yu
- 申请人： Yale University
- 申请人地址： Two Whitney Avenue New Haven, CT 06570 US
- 专利权人： Yale University
- 当前专利权人： Yale University
- 当前专利权人地址： Two Whitney Avenue New Haven, CT 06570 US
- 代理机构： Schnappauf, Georg
- 优先权： US326722P 20100422; US369322P 20100730; US369274P 20100730; US298788P 20100127; US369306P 20100730; US347054P 20100521; US385300P 20100922; US347001P 20100521; US369333P 20100730; US371308P 20100806; US369287P 20100730
- 国际公布： WO2011094391 20110804
- 主分类号： H01L21/326
- IPC分类号： H01L21/326
摘要：
This invention relates to methods of generating NP gallium nitride (GaN) across large areas (> 1 cm
2 ) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
2 ) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/326 | .....电流或电场的应用，例如用于电铸成型的 |