基本信息:
- 专利标题： Controlled value reference signal of resistance based memory circuit
- 专利标题（中）：具有用于基于电阻的存储器电路的受控可变参考信号
- 申请号：EP12176957.4 申请日：2009-06-23
- 公开(公告)号：EP2515305A1 公开(公告)日：2012-10-24
- 发明人： Jung, Seong-Ook , Kim, Ji-Su , Song, Jee-Hwan , Kang, Seung H , Yoon, Sei Seung
- 申请人： Qualcomm Incorporated
- 申请人地址： 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 专利权人： Qualcomm Incorporated
- 当前专利权人： Qualcomm Incorporated
- 当前专利权人地址： 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 代理机构： Dunlop, Hugh Christopher
- 优先权： US164436 20080630
- 主分类号： G11C11/16
- IPC分类号： G11C11/16
摘要：
A memory circuit comprises a magnetoresistive random access memory MRAM reference bit cell comprising a first current clamp and a first load circuit. The reference bit cell receives a control input at a control terminal of the first current clamp and outputs, in response to the control input, a controlled value reference voltage. The memory circuit also comprises a magnetoresistive random access memory MRAM data bit cell comprising a second load circuit, an MRAM load generator cell for generating a load control signal, the load control signal being supplied to the first load circuit and the second load circuit, and a sense amplifier. The sense amplifier comprises a first input coupled to the at least one magnetoresistive random access memory MRAM bit cell and a second input adapted to receive an input signal comprising the controlled value reference voltage.
公开/授权文献:
IPC结构图谱:
| G11C11/56 | 组优先于G11C11/02至G11C11/54中各组。 |
| --G11C11/02 | .应用磁性元件的 |
| ----G11C11/16 | ..应用磁自旋效应的存储元件的 |