基本信息:
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 申请号：EP10829680.7 申请日：2010-11-01
- 公开(公告)号：EP2500931B1 公开(公告)日：2018-10-24
- 发明人： SAITO, Daishiro , KAI, Takayuki , OKUMA, Takafumi , YAMANISHI, Hitoshi
- 申请人： Invensas Corporation
- 申请人地址： 3025 Orchard Parkway San Jose, CA 95134 US
- 专利权人： Invensas Corporation
- 当前专利权人： INVENSAS CORPORATION
- 当前专利权人地址： INVENSAS CORPORATION
- 代理机构： Clark, Jane Anne
- 优先权： JP2009258582 20091112
- 国际公布： WO2011058712 20110519
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/48 ; H01L21/768
摘要：
A semiconductor device (1) includes a second oxide film (9) and a pad electrode (5) on a first oxide film (8) that is formed on a front surface (2a) of a semiconductor substrate (2), a contact electrode (6) and a first barrier layer (7) formed in the second oxide film and connected to the pad electrode, a silicide portion (10) formed between the contact electrode and a through-hole electrode layer (12) and connected to the contact electrode and the first barrier layer, a via hole (11) extending from a back surface (2b) of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film (13) formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a secondbarrier layer (14) and a rewiring layer (15) formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |