基本信息:
- 专利标题： METHOD FOR PRODUCING HIGH PURITY SILICON
- 专利标题（中）：工艺生产高纯度硅
- 申请号：EP10819087.7 申请日：2010-09-09
- 公开(公告)号：EP2480497A1 公开(公告)日：2012-08-01
- 发明人： ZEAITER, Khalil
- 申请人： Elkem Solar AS
- 申请人地址： Hoffsveien 65B 0377 Oslo NO
- 专利权人： Elkem Solar AS
- 当前专利权人： REC SOLAR NORWAY AS, KRISTIANSAND, NO
- 当前专利权人地址： REC SOLAR NORWAY AS, KRISTIANSAND, NO
- 代理机构： Copsey, Timothy Graham
- 优先权： NO20093054 20090923
- 国际公布： WO2011037473 20110331
- 主分类号： C01B33/037
- IPC分类号： C01B33/037 ; C01B33/02 ; C30B29/06
摘要：
The present invention relates to a method for producing high purity silicon comprising providing molten silicon containing 1-10% by weight of calcium, casting the molten silicon, crushing the silicon and subjecting the crushed silicon to a first leaching step in an aqueous solution of HCI and/or HCI + FeCI3 and to a second leaching step in an aqueous solution of HF and HNO3. The leached silicon particles is thereafter subjected to heat treatment at a temperature of between 1250°C and 14200C for a period of at least 20 minutes and the heat treated silicon is subjected to a third leaching step in an aqueous solution of HF and HNO3.
公开/授权文献:
- EP2480497B1 METHOD FOR PRODUCING HIGH PURITY SILICON 公开/授权日：2017-03-15