发明公开
EP2351063A1 METHODS AND DEVICES FOR HIGH THROUGHPUT CRYSTAL STRUCTURE ANALYSIS BY ELECTRON DIFFRACTION
有权
基本信息:
- 专利标题： METHODS AND DEVICES FOR HIGH THROUGHPUT CRYSTAL STRUCTURE ANALYSIS BY ELECTRON DIFFRACTION
- 专利标题（中）：方法和装置高通THROUGH电子BREAK晶体结构分析
- 申请号：EP09756702.8 申请日：2009-11-06
- 公开(公告)号：EP2351063A1 公开(公告)日：2011-08-03
- 发明人： NICOLOPOULOS, Stavros , BULTREYS, Daniel , RAUCH, Edgard
- 申请人： Nanomegas SPRL , Institut Polytechnique de Grenoble , Centre National de la Recherche Scientifique
- 申请人地址： Boulevard Edmond Machtens 79 Boîte 22 1080 Molenbeek-Saint-Jean BE
- 专利权人： Nanomegas SPRL,Institut Polytechnique de Grenoble,Centre National de la Recherche Scientifique
- 当前专利权人： Nanomegas SPRL,Institut Polytechnique de Grenoble,Centre National de la Recherche Scientifique
- 当前专利权人地址： Boulevard Edmond Machtens 79 Boîte 22 1080 Molenbeek-Saint-Jean BE
- 代理机构： Gyi, Jeffrey Ivan
- 优先权： EP08168475 20081106; US112036P 20081106
- 国际公布： WO2010052289 20100514
- 主分类号： H01J37/20
- IPC分类号： H01J37/20 ; G01N23/20
摘要：
A method and device for electron diffraction tomography of a crystal sample, which employs scanning of the electron beam over a plurality of discrete locations of the sample, in combination with a beam scanning protocol as the beam converges at every discrete location (42, 43) of the sample (38) to obtain a series of electron diffraction patterns, use of template matching to determine crystal orientations and thickness maps to obtain a common intensity scaling factor.