基本信息:
- 专利标题： TWO-STEP HARDMASK FABRICATION METHODOLOGY FOR SILICON WAVEGUIDES
- 专利标题（中）：两段HART掩模工艺硅波导
- 申请号：EP09810591.9 申请日：2009-08-27
- 公开(公告)号：EP2318865A1 公开(公告)日：2011-05-11
- 发明人： CAROTHERS, Daniel, N. , HILL, Craig, M. , POMERENE, Andrew TS
- 申请人： Bae Systems Information And Electronic Warfare Systems, Inc.
- 申请人地址： P.o. Box 868 NHQ1-719 Nashua, NH 03061-0868 US
- 专利权人： Bae Systems Information And Electronic Warfare Systems, Inc.
- 当前专利权人： Bae Systems Information And Electronic Warfare Systems, Inc.
- 当前专利权人地址： P.o. Box 868 NHQ1-719 Nashua, NH 03061-0868 US
- 代理机构： BAE SYSTEMS plc Group IP Department
- 优先权： US201807 20080829
- 国际公布： WO2010025264 20100304
- 主分类号： G02B6/10
- IPC分类号： G02B6/10
摘要：
Techniques are disclosed for efficiently fabricating semiconductors including waveguide structures. In particular, a two-step hardmask technology is provided that enables a stable etch base within semiconductor processing environments, such as the CMOS fabrication environment. The process is two-step in that there is deposition of a two-layer hardmask, followed by a first photolithographic pattern, followed by a first silicon etch, then a second photolithographic pattern, and then a second silicon etch. The process can be used, for example, to form a waveguide structure having both ridge and channel configurations, or a waveguide (ridge and/or channel) and a salicide heater structure, all achieved using the same hardmask. The second photolithographic pattern allows for the formation of the lower electrical contacts to the waveguides (or other structures) without a complicated rework of the hardmask.
IPC结构图谱:
| G | 物理 |
| --G02 | 光学 |
| ----G02B | 光学元件、系统或仪器 |
| ------G02B6/00 | 光导；包含光导和其他光学元件（如耦合器）的装置的结构零部件 |
| --------G02B6/10 | .光波导式的 |