发明公开
EP2221162A1 ETCHING MASK, BASE MATERIAL HAVING ETCHING MASK, FINELY PROCESSED ARTICLE, AND METHOD FOR PRODUCTION OF FINELY PROCESSED ARTICLE
审中-公开
基本信息:
- 专利标题： ETCHING MASK, BASE MATERIAL HAVING ETCHING MASK, FINELY PROCESSED ARTICLE, AND METHOD FOR PRODUCTION OF FINELY PROCESSED ARTICLE
- 专利标题（中）：蚀刻掩模，WITH蚀刻掩模，FINE加工制品并产生精细加工制品方法基本物质
- 申请号：EP08848634.5 申请日：2008-11-13
- 公开(公告)号：EP2221162A1 公开(公告)日：2010-08-25
- 发明人： TAKAYA, Yoshiaki , SATSUKA, Takuro , HAYASHIDA, Yoshihisa , KUSUURA, Takahisa , MITRA, Anupam
- 申请人： Maruzen Petrochemical CO., LTD. , Scivax Corporation
- 申请人地址： 25-10, Hacchobori 2-chome Chuo-ku Tokyo 104-8502 JP
- 专利权人： Maruzen Petrochemical CO., LTD.,Scivax Corporation
- 当前专利权人： Maruzen Petrochemical CO., LTD.,Scivax Corporation
- 当前专利权人地址： 25-10, Hacchobori 2-chome Chuo-ku Tokyo 104-8502 JP
- 代理机构： Gille, Christian
- 优先权： JP2007295452 20071114
- 国际公布： WO2009063639 20090522
- 主分类号： B29C59/02
- IPC分类号： B29C59/02 ; C08L45/00 ; C08L65/00 ; H01L21/027
摘要：
There are provided an etching mask which has a superior thermal imprinting characteristic and also a good anti-etching characteristic, a base material with the etching mask, a microfabricated product to which those etching mask and base material are applied, and a production method of the microfabricated product. The etching mask formed of a thermoplastic resin containing at least one kind of skeleton expressed by a chemical formula (1) or a chemical formula (2) in a main chain (R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 in the formulae (1), (2) can be different or same one another, each of which is a hydrogen atom, a deuterium atom, a hydrocarbon group having a carbon number of 1 to 15, a halogen atom, or a substituent group containing a hetero atom like oxygen or sulfur, and may form a ring structure one another. m and n are integers equal to or greater than 0).
IPC结构图谱:
| B | 作业；运输 |
| --B29 | 塑料的加工；一般处于塑性状态物质的加工 |
| ----B29C | 塑料的成型或连接；塑性状态物质的一般成型；已成型产品的后处理，如修整 |
| ------B29C59/00 | 表面成型，如压花；所用的设备 |
| --------B29C59/02 | .用机械方法，如压制 |