基本信息:
- 专利标题： FORMATION OF A SLOT IN A SILICON SUBSTRATE
- 专利标题（中）：时隙的在硅衬底教育
- 申请号：EP08797152.9 申请日：2008-08-04
- 公开(公告)号：EP2186120A1 公开(公告)日：2010-05-19
- 发明人： KOMMERA, Swaroop K. , BHOWMIK, Siddhartha , ORAM, Richard, J. , RAMAMOORTHI, Sriram , BRAUN, David, M.
- 申请人： Hewlett-Packard Development Company, L.P.
- 申请人地址： 11445 Compaq Center Drive West Houston, TX 77070 US
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： 11445 Compaq Center Drive West Houston, TX 77070 US
- 代理机构： Beccarelli, Sandra Béatrice Yvonne
- 优先权： US894316 20070821
- 国际公布： WO2009025986 20090226
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A slot (18) is formed that reaches through a first side (21) of a silicon substrate (12) to a second side of the silicon substrate (12). A trench (15) is laser patterned. The trench (15) has a mouth at the first side (21) of the silicon substrate (12). The trench (15) does not reach the second side of the silicon substrate (12). the trench (15) is dry etched until a depth of at least a portion of the trench (15) is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot (18). the wet etch etches silicon from all surfaces of the trench (15).
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |