基本信息:
- 专利标题： MESA termination structures for power semiconductor devices
- 专利标题（中）：功率半导体器件MESA端接结构
- 申请号：EP09163424.6 申请日：2009-06-22
- 公开(公告)号：EP2154723A3 公开(公告)日：2010-05-05
- 发明人： Zhang, Qingchun , Agarwal, Anant
- 申请人： Cree, Inc.
- 申请人地址： 4600 Silicon Drive Durham, NC 27703 US
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： 4600 Silicon Drive Durham, NC 27703 US
- 代理机构： Bankes, Stephen Charles Digby
- 优先权： US189551 20080811
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/861 ; H01L29/78 ; H01L29/739 ; H01L29/732 ; H01L29/744 ; H01L29/24 ; H01L29/10
摘要：
An electronic device (100A) includes a drift layer (112) having a first conductivity type, a buffer layer (122) having a second conductivity type, opposite the first conductivity type, on the drift layer and forming a P-N junction with the drift layer, and a junction termination extension region (120) having the second conductivity type in the drift layer adjacent the P-N junction. The buffer layer includes a step portion (131) that extends over a buried portion (124) of the junction termination extension. Related methods are also disclosed.
公开/授权文献:
- EP2154723B1 MESA termination structures for power semiconductor devices 公开/授权日：2020-03-04