发明公开
EP2111632A1 CLEAVED FACET (GA,AL,IN)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR {11-2N} BULK GALLIUM NITRIDE SUBSTRATES
审中-公开
基本信息:
- 专利标题： CLEAVED FACET (GA,AL,IN)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR {11-2N} BULK GALLIUM NITRIDE SUBSTRATES
- 专利标题（中）：解理面（GA，铝，In）N复合EDGE发光二极管ON半极性的氮化镓} {11-2N
- 申请号：EP08725469.4 申请日：2008-02-12
- 公开(公告)号：EP2111632A1 公开(公告)日：2009-10-28
- 发明人： NAKAMURA, Shuji , SPECK, James, S. , DENBAARS, Steven, P. , TYAGI, Anurag
- 申请人： The Regents of the University of California
- 申请人地址： 1111 Franklin Street, 12th Floor Oakland, CA 94607 US
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： 1111 Franklin Street, 12th Floor Oakland, CA 94607 US
- 代理机构： Jackson, Martin Peter
- 优先权： US889518P 20070212
- 国际公布： WO2008100504 20080821
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A Ill-nitride edge-emitting laser diode is formed on a surface of a Ill-nitride substrate having a semipolar orientation, wherein the Ill-nitride substrate is cleaved by creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the Ill-nitride substrate, and then applying force along the cleavage line to create one or more cleaved facets of the Ill-nitride substrate, wherein the cleaved facets have an m-plane or α-plane orientation.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |