基本信息:
- 专利标题： EFFICIENT TRANSISTOR STRUCTURE
- 专利标题（中）：高效晶体管结构
- 申请号：EP07809055.2 申请日：2007-05-08
- 公开(公告)号：EP2030237A2 公开(公告)日：2009-03-04
- 发明人： SUTARDJA, Sehat
- 申请人： Marvell World Trade Ltd.
- 申请人地址： L'Horizon, Gunsite Road Brittons Hill St. Michael 14027 BB
- 专利权人： Marvell World Trade Ltd.
- 当前专利权人： Marvell World Trade Ltd.
- 当前专利权人地址： L'Horizon, Gunsite Road Brittons Hill St. Michael 14027 BB
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 优先权： US798568P 20060508; US821008P 20060801; US823332P 20060823; US824357P 20060901; US825517P 20060913; US524113 20060920; US586467 20061025; US586470 20061025; US586471 20061025
- 国际公布： WO2007136556 20071129
- 主分类号： H01L27/02
- IPC分类号： H01L27/02
摘要：
An integrated circuit comprises a first source, a first drain, a second source, a first gate arranged between the first source and the first drain, and a second gate arranged between the first drain and the second source. The first and second gates define alternating first and second regions in the drain. The first and second gates are arranged farther apart in the first regions than in the second regions.
公开/授权文献:
- EP2030237B1 EFFICIENT TRANSISTOR STRUCTURE 公开/授权日：2011-02-09