基本信息:
- 专利标题： THIN SILICON OR GERMANIUM SHEETS AND PHOTOVOLTAICS FORMED FROM THIN SHEETS
- 专利标题（中）：硅或锗薄膜和光伏制品
- 申请号：EP07753016.0 申请日：2007-03-13
- 公开(公告)号：EP1997126A2 公开(公告)日：2008-12-03
- 发明人： HIESLMAIR, Henry , MOSSO, Ronald, J. , LYNCH, Robert, B. , CHIRUVOLU, Shivkumar , MCGOVERN, William, E. , HORNE, Craig, R. , SOLAYAPPAN, Narayan , CORNELL, Ronald, M.
- 申请人： Nanogram Corporation
- 申请人地址： 165 Topaz Street Milipitas, CA 95035 US
- 专利权人： Nanogram Corporation
- 当前专利权人： Nanogram Corporation
- 当前专利权人地址： 165 Topaz Street Milipitas, CA 95035 US
- 代理机构： Schreiber, Christoph
- 优先权： US782115P 20060313
- 国际公布： WO2007106502 20070920
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/31 ; H01L21/205
摘要：
Thin semiconductor foils can be formed using light reactive deposition. These foils can have an average thickness of less than 100 microns. In some embodiments, the semiconductor foils can have a large surface area, such as greater than about 900 square centimeters. The foil can be free standing or releasably held on one surface. The semiconductor foil can comprise elemental silicon, elemental germanium, silicon carbide, doped forms thereof, alloys thereof or mixtures thereof. The foils can be formed using a release layer that can release the foil after its deposition. The foils can be patterned, cut and processed in other ways for the formation of devices. Suitable devices that can be formed form the foils include, for example, photovoltaic modules and display control circuits.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |