基本信息:
- 专利标题： SURFACE EMITTING LASER DIODE AND ITS MANUFACTURING METHOD
- 专利标题（中）：奥氏体不饱和脂肪酸
- 申请号：EP05748559.1 申请日：2005-06-08
- 公开(公告)号：EP1780849A1 公开(公告)日：2007-05-02
- 发明人： Sato, Shunichi , Itoh, Akihiro , Jikutani Naoto
- 申请人： Ricoh Company, Ltd.
- 申请人地址： 3-6, Nakamagome 1-chome, Ohta-ku Tokyo 143-8555 JP
- 专利权人： Ricoh Company, Ltd.
- 当前专利权人： Ricoh Company, Ltd.
- 当前专利权人地址： 3-6, Nakamagome 1-chome, Ohta-ku Tokyo 143-8555 JP
- 代理机构： Leeming, John Gerard
- 优先权： JP2004173890 20040611; JP2004359671 20041213; JP2005088188 20050325; JP2005101765 20050331
- 国际公布： WO2005122350 20051222
- 主分类号： H01S5/183
- IPC分类号： H01S5/183
摘要：
A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of Al x Ga 1-x As (0 y Ga 1-y As (0≤y
摘要（中）：
表面发射激光二极管包括在半导体衬底上的空腔区域，并且包括含有产生激光和阻挡层的至少一个量子阱活性层的有源层，间隔层设置在有源层附近并形成 至少一种材料，上下反射器设置在空腔区域的顶部和底部，空腔区域和上下反射器在半导体衬底上形成台面结构，上反射器和下反射器为 由半导体分布布拉格反射体形成，其具有周期性的折射率变化并且通过光波的干涉反射入射光，至少一部分半导体分布布拉格反射器由Al x Ga 1-x的小折射率层形成 作为（0
公开/授权文献:
- EP1780849B1 SURFACE EMITTING LASER DIODE AND ITS MANUFACTURING METHOD 公开/授权日：2013-01-30