![A NOT circuit](/ep/2006/06/07/EP1662575A3/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: A NOT circuit
- 专利标题(中):Ein NOT-Schaltkreis
- 申请号:EP06001940.3 申请日:2001-10-29
- 公开(公告)号:EP1662575A3 公开(公告)日:2006-06-07
- 发明人: Aona, Masakazu , Hasegawa, Tsuyoshi , Terabe, Kazuya , Nakayama, Tomonobu
- 申请人: Japan Science and Technology Agency , Riken
- 申请人地址: 4-1-8, Honcho Kawaguchi-shi Saitama JP
- 专利权人: Japan Science and Technology Agency,Riken
- 当前专利权人: Japan Science and Technology Agency,Riken
- 当前专利权人地址: 4-1-8, Honcho Kawaguchi-shi Saitama JP
- 代理机构: Hoarton, Lloyd Douglas Charles
- 优先权: JP2000334686 20001101; JP2001138103 20010509
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L29/66
摘要:
A NOT circuit is realised using a device which includes an atomic switch serving as a two-terminal device, the device including a first electrode (102) made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode (103) made of a conductive substance, and capable of controlling conductance between the electrodes.
摘要(中):
提供了一种点接触阵列,其中布置有多个点触点,每个点接触电和可逆地控制电极之间的电导并且可应用于运算电路,逻辑电路和存储器件,NOT电路和 使用该电路的电子电路。 电路包括多个点接点,每个点接触由由具有离子导电性和电子导电性的复合导电材料制成的第一电极和由导电物质制成的第二电极组成。 控制各点触点的电导,实现电路。 Ag2S,Ag2Se,Cu2S或Cu2Se优选用作复合导电材料。 当在电极之间插入半导体或绝缘体材料时,优选使用GeSx,GeSex,GeTex或WOx(0
公开/授权文献:
- EP1662575B1 A NOT circuit 公开/授权日:2007-10-17