
基本信息:
- 专利标题: IMAGE INTENSIFIER AND ELECTRON MULTIPLIER THEREFOR
- 专利标题(中):电子倍增器
- 申请号:EP04758323.2 申请日:2004-03-25
- 公开(公告)号:EP1611589A2 公开(公告)日:2006-01-04
- 发明人: SMITH, Arlynn, Walter
- 申请人: ITT MANUFACTURING ENTERPRISES, INC.
- 申请人地址: 1105 North Market Street, Suite 1217 Wilmington, Delaware 19801 US
- 专利权人: ITT MANUFACTURING ENTERPRISES, INC.
- 当前专利权人: ITT MANUFACTURING ENTERPRISES, INC.
- 当前专利权人地址: 1105 North Market Street, Suite 1217 Wilmington, Delaware 19801 US
- 代理机构: Esser, Wolfgang
- 优先权: US396906 20030325
- 国际公布: WO2004088702 20041014
- 主分类号: H01J1/32
- IPC分类号: H01J1/32 ; H01J43/22
摘要:
An image intensifier (300) and electron multiplier (312) therefor is disclosed. Photons (308) of an image impinge a photo-cathode (306) that converts the photons to electrons. An electron multiplier multiplies the electrons from the photo-cathode to create an increased number of electrons. A sensor (304) captures the increased number of electrons to produce an intensified image. The electron multiplier is an electron bombarded device (EBD) containing a semiconductor structure (320). The semiconductor structure has an input surface (320a) for receiving electrons and an emission surface (320b) for passing an increased number of electrons. The semiconductor structure is doped to direct the flow of electrons through the semiconductor structure to an emission area on the emission surface.
公开/授权文献:
- EP1611589B1 Electron multiplier 公开/授权日:2008-05-21