发明公开
EP1556737A2 NANOMETER-SCALE ENGINEERED STRUCTURES, METHODS AND APPARATUS FOR FABRICATION THEREOF, AND APPLICATIONS TO MASK REPAIR, ENHANCEMENT, AND FABRICATION
有权
基本信息:
- 专利标题： NANOMETER-SCALE ENGINEERED STRUCTURES, METHODS AND APPARATUS FOR FABRICATION THEREOF, AND APPLICATIONS TO MASK REPAIR, ENHANCEMENT, AND FABRICATION
- 专利标题（中）：用于生产纳米范围内的结构FOR USE IN THE MASK修复
- 申请号：EP03783067.6 申请日：2003-10-21
- 公开(公告)号：EP1556737A2 公开(公告)日：2005-07-27
- 发明人： VAN CROCKER, PercyNanoink, Inc. , CRUCHON-DUPEYRAT, Sylvain , DEMERS, LinetteNanoInk, Inc. , ELGHANIAN, RobertNanoInk, Inc. , DISAWAL, SandeepNanoInk, Inc. , AMRO, NabilNanoInk, Inc. , ZHANG, HuaNanoInk, Inc.
- 申请人： Nanoink, Inc.
- 申请人地址： 1335 Randolph St. Chicago, IL 60607 US
- 专利权人： Nanoink, Inc.
- 当前专利权人： Nanoink, Inc.
- 当前专利权人地址： 1335 Randolph St. Chicago, IL 60607 US
- 代理机构： Bösl, Raphael, Dr.rer.nat., Dipl.-Chem.
- 优先权： US419781P 20021021
- 国际公布： WO2004038504 20040506
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
Photomask repair and fabrication with use of direct-write nanolithography, including use of scanning probe microscopic tips for deposition of ink materials including solgel and metallic inks. Additive methods can be combined with substractive methods. Holes can be filled with nanostructures. Height of the nanostructure filling the hole can be controlled without losing control of the lateral dimensions of the nanostructure. Chrome-on-Glass masks can be used and fabricated, as well as more advanced masks including masks for nanoimprint nanolithography.