基本信息:
- 专利标题： RINSING AFTER CHEMICAL-MECHANICAL PLANARIZATION PROCESS APPLIED ON A WAFER
- 专利标题（中）：后用清水洗净在晶圆的化学机械平坦化工艺
- 申请号：EP03765257.5 申请日：2003-07-22
- 公开(公告)号：EP1545833B1 公开(公告)日：2011-06-15
- 发明人： FILIPOZZI, Laurent , METRAL, Frédéric
- 申请人： S.O.I.Tec Silicon on Insulator Technologies
- 申请人地址： Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR
- 专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人： SOITEC, FR
- 当前专利权人地址： SOITEC, FR
- 代理机构： Texier, Christian
- 优先权： FR0209336 20020723; US446985P 20021223
- 国际公布： WO2004009289 20040129
- 主分类号： B24B1/00
- IPC分类号： B24B1/00
摘要：
Method of chemical-mechanical planarization (CMP) onto a wafer having a non-metallic surface material containing at least partly silicon, comprising the following steps a) polishing the surface of the wafer using a polishing plate together with a polishing solution, the said polishing solution comprising a chemical agent for chemical attacking the said surface and abrasive particles for mechanically attacking the said surface; b) rinsing residues resulting from the polishing step; and c) final cleaning; characterized in that the rinsing solution of step b) is progressively introduced onto the wafer surface so that the chemical attack of step a) is controllably stopped before going beyond a desired planarization.
公开/授权文献:
IPC结构图谱:
| B | 作业；运输 |
| --B24 | 磨削；抛光 |
| ----B24B | 用于磨削或抛光的机床、装置或工艺；磨具磨损表面的修理或调节；磨削，抛光剂或研磨剂的进给 |
| ------B24B1/00 | 磨削或抛光的工艺；与此工艺有关的所用辅助设备 |