基本信息:
- 专利标题： TRANSISTORSCHALTUNG
- 专利标题（英）：Transistor circuit
- 专利标题（中）：晶体管电路
- 申请号：EP03748089.4 申请日：2003-09-25
- 公开(公告)号：EP1543618B1 公开(公告)日：2009-10-14
- 发明人： SUNDERMEYER, Jan , SAUERER, Josef
- 申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- 申请人地址： Hansastrasse 27c 80686 München DE
- 专利权人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- 当前专利权人： FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWAN
- 当前专利权人地址： FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWAN
- 代理机构： Schoppe, Fritz
- 优先权： DE10245453 20020927; DE10252594 20021112
- 国际公布： WO2004032324 20040415
- 主分类号： H03K19/018
- IPC分类号： H03K19/018 ; H03K19/0185 ; H03F3/50 ; H03K19/003
摘要：
The invention relates to a transistor circuit comprising an emitter-follower transistor (EF ) provided with an emitter that is connected to the collector of a first current source transistor (SQ ), the base of the first emitter-follower transistor (EF ) representing an input (IN) of the circuit and the base of the first current source transistor (SQ ) representing a reference voltage input (REF). Said transistor circuit also comprises a second emitter-follower transistor (EF ) provided with an emitter that is connected to the collector of a second current source transistor (SQ ), the emitter of the first current source transistor (SQ ) and the base of the second current source transistor being interconnected in such a way that the voltage (REF ) applied to the base of the second current source transistor (SQ ) depends on the voltage applied to the emitter of the first current source transistor (SQ ). As an alternative to the cited bipolar transistors, the inventive transistor circuit also comprises correspondingly interconnected field-effect transistors.
公开/授权文献:
- EP1543618A1 TRANSISTORSCHALTUNG 公开/授权日：2005-06-22
IPC结构图谱:
| H | 电学 |
| --H03 | 基本电子电路 |
| ----H03K | 脉冲技术 |
| ------H03K19/00 | 逻辑电路，即，至少有两个输入作用于一个输出的；倒向电路 |
| --------H03K19/01 | .提高开关速度的改进 |
| ----------H03K19/018 | ..仅使用双极晶体管的 |