基本信息:
- 专利标题： Producing conductive layers
- 专利标题（中）：导电层的制备
- 申请号：EP04251119.6 申请日：2004-02-27
- 公开(公告)号：EP1465201A3 公开(公告)日：2006-01-04
- 发明人： Beck, Patricia A. , Ohlberg, Douglas , Stewart, Duncan , Li, Zhiyong
- 申请人： Hewlett-Packard Development Company, L.P.
- 申请人地址： 20555 S.H. 249 Houston, TX 77070 US
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： 20555 S.H. 249 Houston, TX 77070 US
- 代理机构： Powell, Stephen David
- 优先权： US405294 20030402
- 主分类号： G11C13/02
- IPC分类号： G11C13/02
摘要：
A method for fabricating molecular electronic devices (10) comprising at least a bottom electrode (14) and a molecular switch film (16) on the bottom electrode (14), includes forming the bottom electrode (14) by a process including: cleaning (36b) portions of the substrate (12) where the bottom electrode (14) is to be deposited; pre-sputtering (36c) the portions; depositing (36d) a conductive layer (14) on at least the portions; and cleaning (36g) the top surface of the conductive layer (14). The conductive electrode (14) properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e. Al 2 O 3 over the conductive layer (14).
公开/授权文献:
- EP1465201A2 Producing conductive layers 公开/授权日：2004-10-06
IPC结构图谱:
| G | 物理 |
| --G11 | 信息存储 |
| ----G11C | 静态存储器 |
| ------G11C13/00 | 特征在于使用不包括在G11C11/00，G11C23/00或G11C25/00各组内的存储元件的数字存储器 |
| --------G11C13/02 | .使用其操作取决于化学变化的存储元件的数字存储器 |