发明公开
EP1189110A3 Method of making a multi-level reticle using bi-level photoresist, including a phase-shiffed multi-level reticle
审中-公开
基本信息:
- 专利标题： Method of making a multi-level reticle using bi-level photoresist, including a phase-shiffed multi-level reticle
- 专利标题（中）：用于通过两层抗蚀剂的装置制造多层光掩模方法和相移掩模的多层
- 申请号：EP01307845.6 申请日：2001-09-14
- 公开(公告)号：EP1189110A3 公开(公告)日：2002-08-28
- 发明人： Ulrich, Bruce Dale , Maliszewski, Gerald William
- 申请人： SHARP KABUSHIKI KAISHA
- 申请人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545-8522 JP
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545-8522 JP
- 代理机构： Brown, Kenneth Richard
- 优先权： US665236 20000918
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; G03F1/14
摘要：
A method of forming a reticle includes providing a reticle blank having a quartz layer, an attenuated phase shift layer, and a metal layer, covering the reticle blank with resist ; patterning the resist into multiple levels; and etching the reticle blank according to the multi-level resist : pattern.