The following process control is performed in the case of fabricating both a wafer for a device including a Ge-containing semiconductor film and a wafer for a SiCMOS device, for example, including no Ge-containing semiconductor film on a common fabrication line. When the wafer including the Ge-containing semiconductor film is to be subjected to high-temperature treatment at 700°C or more in the state of the Ge-containing semiconductor film being substantially exposed, the Ge-containing semiconductor film is covered with a cap layer made of Si or the like before the high-temperature treatment. The cap layer may be formed on the common fabrication line, but, if the formation of the cap layer itself involves high temperature of 700°C or more, it is performed on a fabrication line separate from the common fabrication line. Alternatively, the cap layer may be formed on a fabrication line separate from the common fabrication line and the high-temperature treatment at 700°C or more may also be performed on a separate fabrication line. Otherwise, it is enough to only perform the high-temperature treatment at 700°C or more on a separate line.