基本信息:
- 专利标题： Semiconductor device with reverse conducting faculty
- 专利标题（中）：具有反向导通功能的半导体装置
- 申请号：EP01301067.3 申请日：2001-02-07
- 公开(公告)号：EP1124260A3 公开(公告)日：2004-03-10
- 发明人： Iida, Katsuji , Sakuma, Takeshi , Imanishi, Yuichiro , Shimizu, Naohiro
- 申请人： NGK INSULATORS, LTD.
- 申请人地址： 2-56 Suda-cho, Mizuho-ku Nagoya-City, Aichi Prefecture 467-8530 JP
- 专利权人： NGK INSULATORS, LTD.
- 当前专利权人： NGK INSULATORS, LTD.
- 当前专利权人地址： 2-56 Suda-cho, Mizuho-ku Nagoya-City, Aichi Prefecture 467-8530 JP
- 代理机构： Paget, Hugh Charles Edward
- 优先权： JP2000030502 20000208
- 主分类号： H01L27/08
- IPC分类号： H01L27/08 ; H01L27/06
摘要：
A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section 114 formed by an n - silicon substrate 101, p + gate regions 102, 104 formed in one surface of the substrate, a p + anode region 111 formed in the other surface of the substrate, a main diode section 134 having a cathode region formed by the silicon substrate and an anode region 131 formed in the one surface of the substrate, and a series arrangement 145 of diodes including plural p + anode regions 142, plural n + cathode contact regions 143 formed in the first surface of the substrate, and plural conductive layers 144 connecting these anode regions and cathode contact regions successively. An anode and a cathode of the series arrangement of diodes are connected to a cathode electrode 110 and an anode electrode 113 of the thyristor section. Each of diodes in the series arrangement has a breakdown voltage lower than that of the thyristor section.
公开/授权文献:
- EP1124260A2 Semiconductor device with reverse conducting faculty 公开/授权日：2001-08-16
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/08 | ...只包括有一种半导体组件的 |