发明公开
EP0874405A2 GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
失效
基本信息:
- 专利标题： GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
- 专利标题（中）：Element auf Basis von GaN mit niedriger Versetzungsdichte，seine Verwendung und Herstellungsverfahren
- 申请号：EP98105090.9 申请日：1998-03-20
- 公开(公告)号：EP0874405A2 公开(公告)日：1998-10-28
- 发明人： Kazuyuki, Tadatomo, c/o Itami Factory , Okagawa, Hiroaki, c/o Itami Factory , Ohuchi, Youichiro, c/o Itami Factory , Miyashita, Keiji, c/o Itami Factory , Hiramatsu, Kazumasa , Sawaki, Nobuhiko , Yahashi, Katsunori , Shibata, Takumi
- 申请人： Mitsubishi Cable Industries, Ltd.
- 申请人地址： 8, Nishinocho Higashimukaijima Amagasaki-shi Hyogo 660-0856 JP
- 专利权人： Mitsubishi Cable Industries, Ltd.
- 当前专利权人： Mitsubishi Cable Industries, Ltd.
- 当前专利权人地址： 8, Nishinocho Higashimukaijima Amagasaki-shi Hyogo 660-0856 JP
- 代理机构： Weber, Thomas, Dr.Dipl.-Chem.
- 优先权： JP91512/97 19970325; JP91513/97 19970325; JP293049/97 19971024; JP293066/97 19971024
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01S3/19
摘要：
A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.
摘要（中）：
一种GaN基晶体基底构件，包括基底衬底，掩模层，部分地覆盖所述基底衬底的表面以产生掩模区域，以及生长在其上以覆盖掩模层的GaN组晶体层，所述掩模层部分地与所述掩模层直接接触 基底的非掩蔽区域，半导体元件的用途，其制造方法以及位错线的控制方法。 本发明的制造方法能够使位于掩模区域或非掩蔽区域以上的GaN族结晶层的一部分具有低位错密度。