基本信息:
- 专利标题： ANTI-FUSE STRUCTURES AND METHODS FOR MAKING SAME
- 专利标题（中）：反熔丝结构和工艺及其
- 申请号：EP92917139.5 申请日：1992-07-24
- 公开(公告)号：EP0597015B1 公开(公告)日：1996-06-19
- 发明人： BOARDMAN, William, J. , CHAN, David, P.-Kwan , CHANG, Kuang-Yeh , GABRIEL, Calvin, T. , JAIN, Vivek , NARIANI, Subhash, R.
- 申请人： VLSI TECHNOLOGY, INC.
- 申请人地址： 1109 McKay Drive San Jose California 95131 US
- 专利权人： VLSI TECHNOLOGY, INC.
- 当前专利权人： VLSI TECHNOLOGY, INC.
- 当前专利权人地址： 1109 McKay Drive San Jose California 95131 US
- 代理机构： Diehl, Hermann, Dr. Dipl.-Phys.
- 优先权： US736162 19910726
- 国际公布： WO9303499 19930218
- 主分类号： H01L23/525
- IPC分类号： H01L23/525
摘要：
An anti-fuse structure characterized by a substrate (18), an oxide layer (46) formed over the substrate having an opening (48) formed therein, an amorphous silicon material (52) disposed within the opening and contacting the substrate, a conductive protective material (59), such as titanium tungsten, disposed over the amorphous silicon material, and oxide spacers (64) lining the walls of a recess formed within the protective material. The protective material and the spacers provide tighter programming voltage distribution for the anti-fuse structure and help prevent anti-fuse failure.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/34 | .冷却装置；加热装置；通风装置或温度补偿装置 |
| ----------H01L23/522 | ..包含制作在半导体本体上的多层导电的和绝缘的结构的外引互连装置的 |
| ------------H01L23/525 | ...具有可适用互连装置的 |