基本信息:
- 专利标题： Metallized circuit substrate comprising nitride type ceramics
- 专利标题（中）：族氮化物型陶瓷的电路基板，其制备和金属化的方法。
- 申请号：EP93111133.0 申请日：1988-03-30
- 公开(公告)号：EP0574956A1 公开(公告)日：1993-12-22
- 发明人： Sato, Hideki , Mizunoya, Nobuyuki , Asai, Hironori , Anzai, Kazuno , Hatano, Tsuyoshi
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构： Hansen, Bernd, Dr. Dipl.-Chem.
- 优先权： JP73989/87 19870330; JP76164/87 19870331; JP76165/87 19870331; JP43858/88 19880226
- 主分类号： C04B41/51
- IPC分类号： C04B41/51 ; H01L21/48 ; H01L23/15 ; H01L21/84
摘要：
Disclosed is:
i) a ceramic substrate comprising:
a nitride ceramic substrate (1); and
a conductive metallized layer (2) mainly comprised of at least one of Mo and W, a group IVb active metal element and at least one metal selected from the group consisting of Co, Ni, Fe, Mn, Cr and V, formed on said substrate.
ii) a ceramic substrate comprising:
a nitride ceramic (1) substrate;
an intermediate reactive layer mainly comprised of a compound containing a grain boundary constituent phase component of said ceramic substrate, and a compound of a group IVb active metal; and
a conductive metallized layer (2) mainly comprised of at least one of molybdenum and tungsten, a nitride of a group IVb active metal and a composite compound comprising an oxide of a group IVb active metal and an oxide of Co, Ni, Fe, Mn, Cr or V, formed on said substrate with the interposition of said intermediate reactive layer.
Disclosed is also a method for preparing these substrates and metallizing composition used therefor.
According to this invention, a circuit substrate having a conductive metallized layer formed thereon with a high joint strength can be obtained.
摘要（中）：
i) a ceramic substrate comprising:
a nitride ceramic substrate (1); and
a conductive metallized layer (2) mainly comprised of at least one of Mo and W, a group IVb active metal element and at least one metal selected from the group consisting of Co, Ni, Fe, Mn, Cr and V, formed on said substrate.
ii) a ceramic substrate comprising:
a nitride ceramic (1) substrate;
an intermediate reactive layer mainly comprised of a compound containing a grain boundary constituent phase component of said ceramic substrate, and a compound of a group IVb active metal; and
a conductive metallized layer (2) mainly comprised of at least one of molybdenum and tungsten, a nitride of a group IVb active metal and a composite compound comprising an oxide of a group IVb active metal and an oxide of Co, Ni, Fe, Mn, Cr or V, formed on said substrate with the interposition of said intermediate reactive layer.
Disclosed is also a method for preparing these substrates and metallizing composition used therefor.
According to this invention, a circuit substrate having a conductive metallized layer formed thereon with a high joint strength can be obtained.
公开了：1）的陶瓷基板，包括：氮化物陶瓷基板（1）; 和导电金属化层（2）主要由选自钴，镍，铁，锰，铬和V中选择的Mo和W，IVb族活性金属元素中的至少一种和至少一种金属的，形成于 所述基材。 ⅱ）的陶瓷基板，包括：氮化物陶瓷（1）的底物; 在主要由含有所述陶瓷基片的晶界相构成成分，和IVb族活性金属的化合物的化合物的反应性中间层; 和导电金属化层（2）主要由钼和钨中的至少一种的，IVb族活性金属的氮化物和含有IVb族活性金属和钴，镍，铁的氧化物的氧化物的复合化合物， 的Mn，Cr或V，形成在所述与所述中间反应层的插入基板。 因此本发明公开了合成底物和金属化组合物用于其制备的方法。 。根据本发明，具有高的接合强度形成有导电金属化层上的电路衬底可制得。
公开/授权文献:
IPC结构图谱:
| C | 化学；冶金 |
| --C04 | 水泥；混凝土；人造石；陶瓷；耐火材料 |
| ----C04B | 石灰；氧化镁；矿渣；水泥；其组合物，例如砂浆、混凝土或类似的建筑材料；人造石；陶瓷；耐火材料；天然石的处理 |
| ------C04B41/00 | 砂浆、混凝土、人造石或陶瓷的后处理；天然石的处理 |
| --------C04B41/45 | .涂覆或浸渍 |
| ----------C04B41/46 | ..用有机材料 |
| ------------C04B41/51 | ...金属化 |