基本信息:
- 专利标题： Method and apparatus for forming thin film and multilayer film
- 专利标题（中）：用于形成薄膜和多层膜的方法和装置
- 申请号：EP92305002.5 申请日：1992-06-01
- 公开(公告)号：EP0521615A3 公开(公告)日：1994-06-29
- 发明人： Yamada, Yuka , Mutoh, Katsuhiko
- 申请人： MATSUSHITA RESEARCH INSTITUTE TOKYO, INC.
- 申请人地址： 3-10-1 Hagashimita, Tama-ku Kawasaki-shi, Kanagawa-ken 214 JP
- 专利权人： MATSUSHITA RESEARCH INSTITUTE TOKYO, INC.
- 当前专利权人： MATSUSHITA RESEARCH INSTITUTE TOKYO, INC.
- 当前专利权人地址： 3-10-1 Hagashimita, Tama-ku Kawasaki-shi, Kanagawa-ken 214 JP
- 代理机构： Warren, Keith Stanley
- 优先权： JP132635/91 19910604
- 主分类号： C23C16/48
- IPC分类号： C23C16/48 ; C23C16/52
摘要：
A thin film forming method and apparatus utilise a photo CVD technique for forming, on a substrate, a thin film of desired thickness or a multilayer film composed of alternate depositions of different kinds of thin films. The apparatus comprises a reaction chamber (51) into which is introduced a reactive gas which is irradiated by light (57) projected through a light introducing window (58) to decompose the reactive gas. The reduced film deposition rate, due to clouding of the light introducing window (58) is corrected so as to form a thin film of a desired thickness.
摘要（中）：
薄膜形成方法和装置利用光CVD技术在衬底上形成所需厚度的薄膜或由不同种类薄膜的交替沉积构成的多层膜。 所述装置包括反应室（51），其中引入反射气体，所述反应气体被照射通过光引入窗口（58）突出的光（57）以分解反应气体。 由于光引入窗（58）的混浊导致的降膜成膜速度被校正，以便形成所需厚度的薄膜。
公开/授权文献:
- EP0521615B1 Method for forming thin film and multilayer film 公开/授权日：1997-10-29